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Polarized and diameter-dependent Raman scattering from individual aluminum nitride nanowires: The antenna and cavity effects

机译:来自各个氮化铝纳米线的极化且依赖于直径的拉曼散射:天线和腔效应

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摘要

Raman scattering of individual aluminum nitride (AlN) nanowires is investigated systematically. The axial direction of single nanowire can be rapidly verified by polarized Raman scattering. The angular dependencies of E-2(high) mode show strongly anisotropic behavior in smaller nanowires, which results from optical antenna effect. Raman enhancement (RE) per unit volume of E-2(high) increases with decreasing diameter of nanowires. Compared to the thin film, similar to 200-fold increase of RE is observed in AlN nanowires having diameter less than 50 nm, which is far beyond the quantum confinement regime. Such a large RE can be attributed to the effects of resonant cavity and stimulated Raman scattering.
机译:系统地研究了单个氮化铝(AlN)纳米线的拉曼散射。单个纳米线的轴向可以通过极化拉曼散射快速验证。 E-2(高)模式的角度依赖性在较小的纳米线中表现出强烈的各向异性行为,这是由光学天线效应引起的。 E-2(高)每单位体积的拉曼增强(RE)随着纳米线直径的减小而增加。与薄膜相比,在直径小于50 nm的AlN纳米线中观察到RE相似地增加了200倍,这远远超出了量子限制范围。如此大的RE可以归因于共振腔和受激拉曼散射的影响。

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